Design of a Dual-Band Power Amplifier Using a Simple Method

This letter presents a simple method to design dual-band high-efficiency power amplifiers (PAs). The coupler is exploited the output circuits of PA. By proper selection impedance conditions terminal ports, can convert fundamental transistor standard 50-Ω load at two frequencies. At same time, second harmonic also controlled without need for additional tuning. For validation, PA designed and fabricated by using CGH40010F GaN HEMT. Measurements indicate that deliver saturated 41.6 42.1 dBm 1 2.3 GHz, respectively. Also, obtained drain efficiency exceeds 72% both